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#9100028

ZTX614 High Gain Darlington NPN TO-226 100V Transistor

NPN Darlington Transistor. This device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage.

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SPECS

WEIGHT:.003lb

Dimensions (mm): 7.87 x 4.7 x 3.93 (max)

Lead spacing (mm): 1.4 individual (max)

Lead Length (mm): 14.47 (min)

Polarity: NPN

C-E Voltage VCEO: 100 V

C-B Voltage VCBO: 120 V

E-B Voltage VEBO: 10 V

IC Collector Current: 800 mA

TJ, TSTG Operating and Storage Junction Temperature Range: -55 ~ +150 °C

DOCUMENTATION

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